4 edition of Temporal response of metal-semiconductor-metal photodetector found in the catalog.
Temporal response of metal-semiconductor-metal photodetector
Thesis (M.A.Sc.)--University of Toronto, 1993.
|Series||Canadian theses = Thèses canadiennes|
|The Physical Object|
|Pagination||2 microfiches : negative.|
Simulation results of the temporal evolution of photocurrent in an interdigitated GaAs metal‐semiconductor‐metal photodetector are presented. The dependence of response time on the distance between fingers ( and μm) is investigated. The solutions of the time‐dependent Schrödinger equation and ensemble Monte Carlo calculations are employed. For a device with μm . Application of Metal-Semiconductor-Metal Photodetector in High-Speed Optical Communication Systems. By Farzaneh Fadakar Masouleh and Narottam Das. Submitted: June 17th Reviewed: August 28th Published: November 19th DOI: /
Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be pA at 30 V. Temporal response . Impulse response of the metal-semiconductor-metal (MSM) detectors is analyzed. Effect of optical excitation level on the MSM-photodetector performance is discussed. At low excitation level the detector speed of response is limited by parasitic capacitance of interdigitated diode structure and by the transit time of the photogene-rated carriers.
InGaAs metal-semiconductor-metal photodetectors with µm feature size finger electrodes have been fabricated. A pulse response time of ps for µm light was measured by means of electro-optical sampling. A 3 dB bandwidth of 70 GHz was extracted from the time domain data. Polarisation-insensitive operation under front illumination was obtained by employing semicircular-type finger. Abstract: The main purpose of this paper is to show the effect of charge accumulation and screening of the electric field on the Schottky Metal-semiconductor-Metal detector response and efficiency, which result of non-uniform distribution carriers along the absorption depth, and along the line between electrodes. The MSM (PD) with an active surface of 3×3 μm 2 and electrode spacing of , 0.
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The temporal response shows faster rise and fall of photocurrent for the photodetector with the superlattice structures relative to the homogeneous AlGaAs.
The relative balance reveals that the superlattice photodetector can detect square pulsed optical signals efficiently upto Hz whereas the bulk one can detect only upto 50 by: 2. The effect of grating diffraction on metal‐semiconductor‐metal photodetector temporal response is shown to be Temporal response of metal-semiconductor-metal photodetector book, and largest for devices with electrode periods less than the optical.
The effect of grating diffraction on metal-semiconductor-metal photodetector temporal response is shown to be signiﬁcant, and largest for devices with electrode periods less than the optical wavelength.
This is related to a polarization dependence of the initial. The effect of grating diffraction on metal‐semiconductor‐metal photodetector temporal response is shown to be significant, and largest for devices with electrode periods less than the optical wavelength.
This is related to a polarization dependence of the initial photogenerated carrier densities and distributions. With subpicosecond illumination, the measured difference in peak temporal Cited by: Numerical modeling of the temporal response of back-gated metal-semiconductor-metal photodetector in an equilibrium condition A.
Habibpour1*, N. Das2 and H. Mashayekhi3 1Depatment of physics, Islamic Azad University, Kazerun Branch, Kazerun, Iran 2Department of Electrical and Computer Engineering, Curtin University, Australia. We have simulated the carrier concentration and temporal response characteristics of a Back-Gated Metal-Semiconductor-Metal (BG-MSM) photodetector in one dimension as a function of optical pulse position on the active region in an equilibrium condition (without bias voltage to the photodetector).
We have adopted a nonlinear ambipolar transport model to simulate the behavior of photo-generated. Improved spectral and temporal response of MSM photodetectors fabricated on MOCVD grown spontaneous AlGaAs superlattice.
superlattice based MSM photodetector. A co-planar metal-semiconductor-metal nonsymmetrical back to back Schottky diode photodetector using natural superlattice AlGaAs grown by metalorganic vapor phase epitaxy on GaAs. The temporal response of an optical integrated device is theoretically analysed.
The device is composed of a Metal-Semiconductor-Metal (MSM) Photodetector and a Light Emitting Diode (LED). The analysis is based on the frequency response of the constituent devices without any optical feedback within the device structure. All expressions describing the frequency response, time response, output.
A metal–semiconductor–metal photodetector (MSM detector) is a photodetector device containing two Schottky contacts, i.e., two metallic electrodes on a semiconductor material, in contrast to a p–n junction as in a photodiode.
It is thus a kind of Schottky barrier detector, but with two Schottky junctions. Variable-sensitivity photodetector that uses a metal–semiconductor–metal structure for optical neural networks Y. Nitta et al Optics Letters 16 Crossref. High-speed μm InGaAs/GaAs metal-semiconductor-metal photodetector C.
Jagannath et al Applied Physics Letters 58 Crossref. The fabricated photodetector exhibits a wide spectrum span ranging from to nm, high responsivity ( A/W), detectivity ( × 10 9 Jones), carrier mobility (μ p = cm 2 V −1 s −1 and μ n = cm 2 V −1 s −1), fast response (rise time.
the temporal response of a MSM photodetector is determined by the slowest carrier in the substrate, we expect the speed of the photodetector to be close to that of those on plain SOI substrates with nm-thick Si layers.
The transmission of the SBBR, measured before depos-iting the metal ﬁngers, was found to be less than 4%. The. This article reports a nonpolar GaN metal–semiconductor–metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (̅0) GaN stripe arrays with a major improvement in crystal quality grown on patterned () silicon substrates by means of using our two-step processes.
Our nonpolar GaN. 12 April High-performance GaAs metal-semiconductor-metal photodetectors grown at intermediate temperatures. Gregory B. Tait Experimental measurements are made of the temporal response of the MSM detector to optical impulses generated by a mode-locked titanium Impulse response of metal semiconductor metal photodetector at high energy.
A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system, and the performance achieved by experimental devices is discussed.
The experimental work concentrates on the barrier-enhanced lattice-matched InAlAs-InGaAs device grown by low pressure organometallic chemical vapor deposition. Metal-semiconductor-metal (MSM) photodiodes are a class of photodetectors comprised of back-to-back Schottky diodes that use an interdigitated electrode configuration on top of an active light.
We report the direct measurement of the intrinsic photocurrent response of both top and back illuminated planar metal-semiconductor-metal structures. We directly observe the temporal dynamics of the hole transport dependence on applied bias and the initial spatial distribution using a near infrared tunable femtosecond light source and electrically biased structures.
Si 3 N 4 /Si composite photodetector was further fabricated, which has a photogenerated voltage of V and an ultra-fast temporal switching speed. In addition, the detector exhibits a good absorption cut-off edge for incident light. Compared to commercial Si p-i-n photodiodes, it has no response to long-wave UV, fulfilling DUV selectivity.
linear response in Eq. 2 (instead of V bias or the voltage limit of the device). Generally speaking, V out becomes nonlinear and asymptotically approaches the voltage limit of the diode’s response as shown in Figure 3.
6 9 12 15 18 21 24 Voltage Limit 10% Deviation Measured Linear Fit FDS Response with 1 k. In this paper a two-dimensional ensemble Monte Carlo particle method is used to simulate the metal-semiconductor-metal (MSM) photodetector response in the terahertz range of signal frequencies.
We consider planar MSM photodetectors consisting of a GaAs absorbing layer with a system of Schottky contacts made 'back-to-back' on the above layer. The model takes into account the features of the. Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications.
Here, high-performance photodetectors based on CH3NH3PbI3 (MAPbI3)/CdS heterostructures are demonstrated. The resulting self-powered MAPbI3/CdS photodetectors show excellent operating characteristics including a .Detectivity and high gain are also measured in the SWIR regime owing to the special plasmonic response.
Furthermore, the temporal response is improved by ∼ The fabrication process is simple and scalable, and it relies on low-resolution and facile fabrication steps with minimal requirements for top-down techniques.Figure Metal-semiconductor-metal photodetector layout showing the Si active area, interdigitated metal electrodes, and the Si0 2 insulation.
MSM photodetector characteristics are determined primarily by substrate material, electrode metal, processing conditions, and electrode layout. The .